Miranda Pantoja, José MiguelSebastián Franco, José Luis2023-06-202023-06-202000-070018-948010.1109/22.853472https://hdl.handle.net/20.500.14352/58955© 2000 IEEE.A simulation at microscopic level of the intrinsic microwave noise temperature associated to GaAs and InP semiconductors under far from equilibrium conditions has been performed. The dependence of the noise temperature on the electric field, doping level, and physical temperature has been investigated, and the results show the existence of threshold fields above which electron heating and partition noise due to intervalley scattering can make the cooling inefficient in terms of noise improvements. A comparison with available experimental data has also been made to verify the accuracy of the models used in the simulation.engjournal articlehttp://dx.doi.org/10.1109/22.853472http://ieeexplore.ieee.orgrestricted access537Schottky-Barrier DiodesHot-Electron NoiseSemiconductorsTransportSpectraMesfet.ElectricidadElectrónica (Física)2202.03 Electricidad