Nogales Díaz, EmilioMéndez Martín, BianchiPiqueras de Noriega, JavierPlugaru, R.2023-06-202023-06-2020031-55899-675-30272-9172https://hdl.handle.net/20.500.14352/60809© Materials Research Society Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures (2002. Boston)Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. The nc-Si films were obtained by boron implantation of amorphous silicon layers with an average nanocrystal size of about 10 nm. STM current constant images reveal a cell structure in the nc-Si films which was also revealed in the STM remote electron beam induced current (REBIC) images with a resolution of up to 20 nm. The contrast in the STM-REBIC images indicate the existence of space charge regions at the boundaries. The influence of the thermal treatment on the cell structure was studied. For comparison, SEM-REBIC and STM-REBIC images from c-Si wafer were obtained.book parthttp://dx.doi.org/10.1557/PROC-738-G7.6http://journals.cambridge.orgmetadata only access538.9Beam-Induced CurrentScanning-Tunneling-MicroscopyGrain-BoundariesPorous SiliconLuminescenceSpectroscopyFísica de materiales