Pampillón. María ÁngelaFeijoo, Pedro CarlosSan Andrés Serrano, EnriqueLucía Mulas, María LuisaPrado Millán, Álvaro DelToledano-Luque, María2024-02-052024-02-052011Pampillón, M. A., et al. «Anomalous Thermal Oxidation of Gadolinium Thin Films Deposited on Silicon by High Pressure Sputtering». Microelectronic Engineering, vol. 88, n.o 9, septiembre de 2011, pp. 2991-96. DOI.org (Crossref), https://doi.org/10.1016/j.mee.2011.04.058.0167-931710.1016/j.mee.2011.04.058https://hdl.handle.net/20.500.14352/99145Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 °C. At an oxidation temperature of 500 °C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiOx is observed as temperature is increased, up to 1.6 nm for 750 °C. This temperature yields the lowest interface trap density, 4 × 1010 eV−1 cm−2, but the effective permittivity of the resulting dielectric is only 7.4. The reason of this low value is found on the oxidation mechanism, which yields a surface with located bumps. These bumps increase the average thickness, thus reducing the capacitance and therefore the calculated permittivity.engjournal article1873-5568https://doi.org/10.1016/j.mee.2011.04.058open access621.3MicroelectronicsMOSHigh-kElectrónica (Física)2203 Electrónica