Franco Peláez, Francisco JavierClemente Barreira, Juan AntonioKorkian, GolnazFabero Jiménez, Juan CarlosMecha López, HortensiaVelazco, Raoul2023-06-162023-06-1620200018-949910.1109/TNS.2020.2977698https://hdl.handle.net/20.500.14352/6087In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment.engAtribución-CompartirIgual 3.0 Españahttps://creativecommons.org/licenses/by-sa/3.0/es/journal articlehttps://ieeexplore.ieee.org/document/9020111open accessBirtdhay StatisticsFPGASEUSRAMElectrónica (Física)RadiactividadCircuitos integradosElectrónica (Informática)Electrónica (Informática)2203.07 Circuitos Integrados2203 Electrónica2203 Electrónica