Domínguez-Adame Acosta, FranciscoPiqueras De Noriega, Francisco Javier2023-06-202023-06-201991-01-010021-897910.1063/1.347692https://hdl.handle.net/20.500.14352/59291© 1991 American Institute of Physics. This work was partially supported by the Comisión Interministerial de Ciencia y Tecnología (Project PB86-0151) and by DGICYT-DAAD.Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.engjournal articlehttp://dx.doi.org/10.1063/1.347692http://scitation.aip.orgopen access538.9Photo-LuminescenceDislocationsFísica de materiales