Maestre Varea, DavidCremades Rodríguez, Ana IsabelPiqueras de Noriega, Javier2023-06-202023-06-202004-11[1] Martinelli G, Carotta M C, Traversa E and Ghiotti G 1999 MRS Bull. 24 30 [2] Xu C, Tamaki J, Miura N and Yamazoe N 1991 Sensors Actuators B 3 147 [3] Bueno P R, Leite E R, Oliveira M M, Orlandi M O and Longo E 2001 Appl. Phys. Lett. 79 48 [4] WangW-X,Wang J-F, Chen H-C, SuW-B, Jiang B, Zang G-Z, Wang C-M and Qi P 2003 J. Phys. D: Appl. Phys. 36 1040 [5] Bubulac L O and Tennant W E 1988 Appl. Phys. Lett. 52 1255 [6] Bueno P R, Pianaro S A, Pereira C, Bulhoes L O S, Longo E and Varela J A 1998 J. Appl. Phys. 84 3700 [7] Bernds A, Löhnert K and Kubalek E 1984 J. Phys. Colloq. 6 181 [8] Díaz-Guerra C and Piqueras J 1999 J. Appl. Phys. 86 1874 [9] Maestre D, Cremades A and Piqueras J 2004 J. Appl. Phys. 95 3027 [10] Panin G and Yakimov E 1992 Semicond. Sci. Technol. 7 150 [11] Holt D B, Raza B and Wojcik A 1996 Mater. Sci. Eng. B 42 14 [12] Ziegler E, Siegel W, Blumtritt H and Breitenstein O 1982 Phys. Status Solidi a 72 593 [13] Cremades A and Piqueras J 1999 J. Appl. Phys. 85 1438 [14] Pandelov S, Seifert W, Kittler M and Reif J 2002 J. Phys.: Condens. Matter 14 13161 [15] Kittler M and Seifert W 1993 Phys. Status Solidi a 138 687 [16] Schockley W and Read W T 1952 Phys. Rev. 87 835 [17] Holt D B 2000 Scanning 22 280268-124210.1088/0268-1242/19/11/004https://hdl.handle.net/20.500.14352/50847© 2004 IOP Publishing Ltd. This work has been supported by MCYT (Project MAT 2003-00455). DM acknowledges a grant from MCYT.Remote electron beam induced current (REBIC) and cathodoluminescence (CL) modes in the scanning electron microscope (SEM) have been used to investigate SnO2 sintered samples. The study of the electrically active boundaries present in the oxide shows a characteristic peak and trough (PAT) contrast after thermal treatments in oxygen. Temperature-dependent measurements of the REBIC contrast show the presence of a shallow defect level 60 meV below the conduction band. This level is asigned to oxygen species adsorbed on the defect-rich boundaries. Evolution of REBIC contrast of the grain boundaries with excitation density enabled us to perform local measurements of minority carrier diffusion length.engjournal articlehttp://iopscience.iop.org/0268-1242/19/11/004http://iopscience.iop.orgrestricted access538.9Beam-Induced-CurrentElectrical-PropertiesOxideSpectroscopyVaristorsDefectsFísica de materiales