Méndez Martín, María BianchiPiqueras De Noriega, Francisco Javier2023-06-202023-06-201993-030268-124210.1088/0268-1242/8/3/002https://hdl.handle.net/20.500.14352/58990© 1993 IOP Publishing Ldt. This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017).Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.engjournal articlehttp://iopscience.iop.org/0268-1242/8/3/002http://iopscience.iop.orgopen access538.9DislocationsBehaviorFísica de materiales