Méndez Martín, BianchiPiqueras de Noriega, Javier2023-06-202023-06-201993-03[I] Jacob G, Wrges J p, Schemali C, Duseaux M, Hallais J, Bartels W J and Roksnoer P J 1982 J. Crystal Growth 57 245 [2] Stirland D J, Hart D G, Grant I, Brael M R and Clark S 1987 Microscopy of Semiconducting Materials 1987 (Inst. Phys. ConJ Ser 87) p 269 [3] Kidd p, Booker G R and Stirland D J 1987 7 Microscopy of Semiconducting Materials 1987 (Inst. Phys. Conf. Ser. 87) p 275 [4] Méndez B and Piqueras J 1992 AppL Phys. Lett. 60 1357 [5] Méndez B and Piqueras J 1989 Microscopy of Semiconducting Materials 1989 (Inst. Phys. Conf Ser 100) p789 [6] Méndez B and Piqueras J 1992 1. AppL Phys. 69 2776 [7] Urchulutegui M, Piqueras J. and Llopis .J. Appl. Phys. 65 2667 [8] Yonenaga I and Sumino K 1987 J. Appl. Phys. 62 1212 [9] Kultscher N and Balk L J 1986 Scannong Electron Microscopy [10] Bresse J F and Papadopoulo A C 1988 J.Appl. Phys. Lett. 51 183 [11] Bresse J F and Papadopoulo A C 1987 AppL Phys. Lett. 51 183. [12] Kirillov D. Victor M andPowell R A 1987 Appl. Phys. Lett. 50 1830268-124210.1088/0268-1242/8/3/002https://hdl.handle.net/20.500.14352/58990© 1993 IOP Publishing Ldt. This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017).Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.engjournal articlehttp://iopscience.iop.org/0268-1242/8/3/002http://iopscience.iop.orgopen access538.9DislocationsBehaviorFísica de materiales