Marcano, N.Sangiao, S.Plaza, M.Pérez García, LucasFernández Pacheco, A.Córdoba, R.Sánchez, M. C.Morellón, L.Ibarra, M. R.De Teresa, J. M.2023-06-202023-06-202010-02-220003-695110.1063/1.3328101https://hdl.handle.net/20.500.14352/42776© American Institute of Physics. This work was supported by Spanish Ministry of Science (through Project Nos. MAT2007-65965-C02-02 and MAT2008-06567-C02) including FEDER funding and the Aragon Regional Government. N. Marcano and S. Sangiao acknowledge financial support from Spanish CSIC (JAE-doc program) and Spanish MEC (FPU program).We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.engjournal articlehttp://dx.doi.org/10.1063/1.3328101http://aip.scitation.orgopen access538.9Transport-propertiesBismuth nanowiresLocalizationArraysFilmsMetalFísica de materialesFísica del estado sólido2211 Física del Estado Sólido