Hidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierPlaza, J.Dieguez, E.2023-06-202023-06-201998-120268-124210.1088/0268-1242/13/12/017https://hdl.handle.net/20.500.14352/58949© 1998 IOP Publishing Ltd. This work has been supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.engjournal articlehttp://iopscience.iop.org/0268-1242/13/12/017http://iopscience.iop.orgopen access538.9Phase EpitaxyCathodoluminescencePhotoluminescenceSpectroscopyExcitationFísica de materiales