Albrecht, M.Cremades Rodríguez, Ana IsabelKrinke, J.Christiansen, S.Ambacher, O.Piqueras De Noriega, Francisco JavierStrunk, H. P.Stutzmann, M.2023-06-202023-06-201999-11[1] J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, Th. Fraunheim, M. Heggie, S. Úberg, and P. R. Briddon, Phys. Rev. Lett. 79, 3672 (1997). [2] J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, Th. Fraunheim, S. Úberg, and P. R. Briddon, Phys. Rev. B 58, 12571 (1998). [3] A. F. Wright and U. Grossner, Appl. Phys. Lett. 73, 2751 (1998). [4] H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastmann, Appl. Phys. Lett. 73, 821 (1998) [5] N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998). [6] P.J. Hansen, Y. E. Strausser, A. N. Erickson, E.J. Tarsa, P. Kozodoy, E. G.Brazel,J. P.Ibbetson, U. Mishra, V. Narayamurti, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 72, 2247 (1998). [7] E. G. Brazel, M. A. Chin, and V. Narayanamurti, Appl. Phys. Lett. 74, 2367 (1999). [8] D. C. Look and J. R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999). [9] S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolani, and H. Erikson, Appl. Phys. Lett. 70, 420 (1997). [10] V. L. Bronch-Bruevich and V. B. Glasko, Fiz. Tverd. Tela 3, 36 (1961). [11] B. PoÈdoÈr, phys. stat. sol. 16, K167 (1966). [12] Z. Lilienthal-Weber, Y. Chen, S. Ruvimov, and J. Washburn, Phys. Rev. Lett. 79, 2835 (1997). [13] M. Albrecht, S.Christiansen, H. P. Strunk,C. Kirchner, M. Mayer, M. Kamp, and K. J. Ebeling, unpublished. [14] M. Kittler and W. Seifert, phys. stat. sol. (a) 138, 687 (1993). [15] Yu. G. Shreter and Yu. T. Rebane, Proc. 23rd Internat. Conf. Physics of Semiconductors, Vol. 4, Eds. M. Scheffler and R. Zimmermann, World Scientific Publ. Co., Singapore 1996 (p. 2937). [16] J. L. Farvacque and B. PoÈdoÈr, phys. stat. sol. (b) 167, 687 (1991).0370-197210.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.3.CO;2-Bhttps://hdl.handle.net/20.500.14352/58826© 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany. International Conference on Nitride Semiconductors (3. 1999. Montpellier, Francia).We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.engjournal articlehttp://onlinelibrary.wiley.com/doi/10.1002/(SICI)1521-3951(199911)216:1%3C409::AID-PSSB409%3E3.0.CO;2-K/abstracthttp://onlinelibrary.wiley.comrestricted access538.9Chemical-Vapor-DepositionThreading-EdgeGan FilmsScatteringFísica de materiales