Nogales Díaz, Emilio2023-06-202023-06-2020061-55899-846-210.1557/proc-0892-ff23-13https://hdl.handle.net/20.500.14352/53570© Materials Research Society. ESSN: 1946-4264 Articulo firmado por 10 autores. Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting (2005. Boston)Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions (¹G₄→³ H₆) associated with Tm^(3) ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 ⁰C. Blue PL emission has also been observed from the sample annealed at 1200 ⁰C . To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra- 4f transitions from the ¹D₂ level (similar to 465 nm emission lines) of Tm(3+) ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm(3+) emission in both GaN:Tm,Er and GaN:Tm samples.engbook parthttp://dx.doi.org/10.1557/proc-0892-ff23-13https://www.cambridge.orgopen access538.9Tm-doped alxga1-xnPhotoluminescenceCathodoluminescenceIonsEuErFísica de materialesFísica del estado sólido2211 Física del Estado Sólido