Zirath, HerbertSakalas, PauliusMiranda Pantoja, José Miguel2023-06-202023-06-202000[1] Process DOlPH from Philips Micronde Limed. [2] G. Gonzales, Microwave amplifiers, Prentice Hall. [3] M. García, N. Rorsman, K. Yhland, H. Zirath, I. Angelov, "Fast, Automatic and Accurate WET Small-Signal Characterization", Microwave Journal, July 1997, pp. 102-117. [4] M. W. Pospieszakki, "Modeling of Noise Paramaters of MESFETs and MODFET and their Frequency and Temperam Dependence", IEEE Trans. on MTT, vol 37 no 9,1989, pp. 1340-1350. [5] J. M. Miranda, H. Zirath, J. L. Sebastián, "Noise modelling of 0.15 pm gate length HFETs based on hGaAs channels", submitted to the GHz 2000 Symposium, March 2000, Goteborg, Sweden. [6] MNS, Hewlett-Packard Microwave Nonlinear Simulator (7th release), HP Part No.85150-90220, manual 4-th edition, printed in U.S.A., HP EEsof Division, 1400 Foutaingrove Parkway, Santa Rosa, CA 95403, U.S.A., 1996).0-7803-6281-010.1109/RFIC.2000.854441https://hdl.handle.net/20.500.14352/60816IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (2000. Boston, USA). © 2000 IEEE. The Swedish Foundation for Strategic research, SSF, and Chalmers Center for high speed Electronics, CHACH, is acknowledged for the funding of this projectA low noise feedback MMIC-amplifier based on a 180 GHz f(max) PHEMT-technology is described. The gain input and output reflection coefficient, de-power consumption, and noise parameters are investigated theoretically and experimentally as a function of dc-bias and frequency. The noise figure is typically 2.5 dB with an associate gain of 22 dB across the 2-20 GHz frequency range. The circuit area is less than 1 mum(2) and the de-power consumption is lower than 100 mW.engbook parthttp://dx.doi.org/10.1109/RFIC.2000.854441http://ieeexplore.ieee.orghttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=854441open access537EngineeringElectrical & ElectronicTelecommunications.ElectricidadElectrónica (Física)2202.03 Electricidad