Puebla, SergioPucher, ThomasRouco Gómez, VíctorSánchez Santolino, GabrielXie, YongZamora Castro, VíctorCuéllar Jiménez, Fabian AndrésMompean, FedericoLeón Yebra, CarlosIsland, Joshua O.García Hernández, MarSantamaría Sánchez-Barriga, JacoboMunuera, CarmenGarcía Hernández, MarCastellanos Gómez, Andrés2023-06-222023-06-222022-09-151530-698410.1021/acs.nanolett.2c02395https://hdl.handle.net/20.500.14352/72633© 2022 The Authors. Published by American Chemical Society European Research Council (ERC) through the project 2DTOPSENSE (GA 755655) European Union’s Horizon 2020 research and innovation program (Graphene Core2-Graphenebased disruptive technologies and Grant Agreement 881603 Graphene Core3-Graphene-based disruptive technologies) EUFLAG-ERA through the project To2Dox (JTC-2019-009) Comunidad de Madrid through the project CAIRO-CM project (Y2020/NMT-6661) Spanish Ministry of Science and Innovation through the projects PID2020-118078RBI00, RTI2018 099054-J-I00 and IJC2018-038164-I, PRE2018-084818 Key Research and Development Program of Shaanxi (Program No.2021KW-02).We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO_3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-kappa gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO_2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.engAtribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/journal articlehttp://dx.doi.org/10.1021/acs.nanolett.2c02395https://pubs.acs.org/open access538.9Field-effect transistorsMoS_2GrapheneHeterostructuresFreestanding complex oxideFerroelectric perovskite oxideFerroelectric field effect transistorMolybdenum disulfide (MoS_2)Barium titanate (BaTiO_3)Física de materialesFísica del estado sólido2211 Física del Estado Sólido