Noise performance of submicron HEMT channels under low power consumption operation

Miranda Pantoja, José MiguelSebastián Franco, José Luis2023-06-202023-06-2020000-7803-5687-Xhttps://hdl.handle.net/20.500.14352/60815IEEE MTT-S International Microwave Symposium (IMS2000) (2000. Boston, USA). © 2000 IEEE. This work has partially been funded by the Swedish Foundation for Scientific Research through the project "Design of 60 GHz WLANs". Paulius Sakalas, Christian Fager, and Ilcho Angelov are acknowledged for their valuable comments.We have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been verified from near pinchoff conditions up to usual bias voltages. An overshoot in the drain temperature as a function of the drain voltage has been observed at low drain currents in deep submicron gate lenght devices.engNoise performance of submicron HEMT channels under low power consumption operationbook parthttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=863582http://ieeexplore.ieee.orgopen access537Models.ElectricidadElectrónica (Física)2202.03 Electricidad