Castro, MarioDomínguez-Adame Acosta, FranciscoSánchez, A.Rodriguez, T.2023-06-202023-06-201999-10-110003-695110.1063/1.124965https://hdl.handle.net/20.500.14352/59360© 1999 American Institute of Physics. The authors wish to thank A. Rodríguez, J. Olivares, and C. Ballesteros for stimulating discussions on experimental issues, and E. Maciá for helpful comments. This work has been supported by CAM under Project No. 07N/0034/98 (M.C. and F.D.-A.), by DGES under Project No. PB96-0119 (A.S.), and by Contract No. MAT96-0438 (T.R.).We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain-size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to a certain degree of crystallinity of the amorphous phases during deposition, or more generally, to impurities or roughness of the substrate.engjournal articlehttp://dx.doi.org/10.1063/1.124965http://scitation.aip.org/open access538.9RecrystallizationSimulationNucleationGrowthMetalsFísica de materiales