López Calle, IsabelFranco Peláez, Francisco JavierAgapito Serrano, Juan AndrésGonzález Izquierdo, Jesús2023-06-202023-06-202011-02-081] R. Velazco, F. J. Franco, "Single event effects on digital integrated Circuits: origins and mitigation techniques", IEEE International Symposium on Industrial Electronics, Vigo (Spain), pp. 3322-3327, July 2007. [2] D. McMorrow, W. Lotshaw, J. Melinger, S. Buchner, and R. Pease, "Subbandgap laser-induced single event effects: carrier generation via two-photon absorption," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 3002-3008, December 2002. [3] R. Koga, S. Crain, K. Crawford, S. Moss, S. LaLumondiere, and J. J. Howard, "Single event transient (SET) sensitivity of radiation hardened and COTS voltage comparators," in IEEE Radiation Effects Data Workshop Records, July 2000, pp. 53-60. [4] C. Poivey, J. J. Howard, S. Buchner, K. LaBel, J. Forney, H. Kim, and A. Assad, "Development of a test methodology for single-event transients (SETs) in linear devices," IEEE Transactions on Nuclear Science, vol. 48, no. 6, pp. 2180-2186, December 2001. [5] S. LaLumondiere, R. Koga, P. Yu, M. Maher, and S. Moss, "Laser induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 3121-3128, December 2002. [6]M. Bernard, L. Dusseau, S. Buchner, D. McMorrow, R. Ecoffet, J. Boch, J.-R. Vaille, R. Schrimpf, and K. LaBel, "Impact of total ionizing dose on the analog single event transient sensitivity of a linear bipolar integrated circuit," IEEE Transactions on Nuclear Science, vol. 54, no. 6, pp. 2534-2540, December 2007. (Pubitemid 350274116) [7] D. Chen, S. Buchner, A. Phan, H. Kim, A. Sternberg, D. McMorrow, and K. LaBel, "The effects of elevated temperature on pulsed-laserinduced single event transients in analog devices," IEEE Transactions on Nuclear Science, vol. 56, no. 6, pp. 3138-3144, December 2009. [8] R. Pease, A. Sternberg, L. Massengill, R. Schrimpf, S. Buchner, M. Savage, J. Titus, and T. Turflinger, "Critical charge for single-event transients (SETs) in bipolar linear circuits," IEEE Transactions on Nuclear Science, vol. 48, no. 6, pp. 1966-1972, December 2001. [9] A. Sternberg, L. Massengill, R. Schrimpf, and P. Calvel, "Application determination of single-event transient characteristics in the LM111 comparator," IEEE Transactions on Nuclear Science, vol. 48, no. 6, pp. 1855-1858, December 2001. [10] M. Savage, T. Turflinger, J. Titus, H. Barsun, A. Sternberg, Y. Boulghassoul, and L. Massengill, "Variations in SET pulse shapes in the LM124A and LM111," in IEEE Radiation Effects Data Workshop Records, July 2002, pp. 75-81. [11] M. Savage, T. Turflinger, J. Titus, R. Pease, and C. Poivey, "Characterization of SET response of the LM124A the LM111, and the LM6144," in IEEE Radiation Effects Data Workshop Records, July 2003, pp. 121-126. [12] "National Semiconductors's website. " This document is avalaible onlineat http://www. national. com/mpf/LM/LM124. html. [13] A. L. Sternberg, et al., "The role of parasitic elements in the single-event transient response of linear circuits," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 3115-3120, December 2002. [14] P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd ed. USA: John Wiley & Sons Inc., 1993, ch. 2, pp. 123-147. [15] "National Semiconductors's website. " This document is avalaible onlineat http://www. national. com/mpf/LM/LM111. html.978-1-4244-7863-710.1109/SCED.2011.5744202https://hdl.handle.net/20.500.14352/45552© IEEE. Spanish Conference on Electron Devices (CDE) (8.2011. Palma de Mallorca, España)One of the main phenomena that commit the reliability of analog electronic systems working in the outer space is the presence of energetic ions that produce spurious transients after crossing the device. These pulses are transmitted to the network loading the device and can eventually lead to dangerous situations as it has been observed in some spatial missions. This paper shows how the value of the resistor loading the device can affect the shape of the transients.engbook parthttp://dx.doi.org/10.1109/SCED.2011.5744202http://ieeexplore.ieee.org/open access537.8Analogue circuitsCircuit reliabilityResistorsTransientsAnalog electronic devicesAnalog electronic systems reliabilityEnergetic ionsLoad resistorNetwork loadingSingle-event transientsSpatial missionsSpurious transientsWorst-case parameterOperational amplifiersSPICEShapeTransient analysisTransistorsVoltage measurementAnalog devicesBipolar technologyLaser testsSingle event transientsSystem reliabilityTwo-photon absorptionElectrónica (Física)Óptica (Física)Circuitos integrados2209.19 Óptica Física2203.07 Circuitos Integrados