San Andrés Serrano, EnriqueGarcía Hernansanz, RodrigoPatricia Moreno, GloriaGarcía Hemme, EricBarrio, RocíoTorres Almarza, IgnacioCaudevilla Gutiérrez, DanielPastor Pastor, DavidOlea Ariza, JavierPrado Millán, Álvaro DelAlgaidy, SariZenteno Pérez, Francisco2023-06-172023-06-17202110.1109/CDE52135.2021.9455754https://hdl.handle.net/20.500.14352/8501©IEEE. Spanish Conference on Electron Devices (CDE)(13.2021.Sevilla) The authors acknowledge the “CAI de Técnicas Físicas” of Universidad Complutense de Madrid for the support in sample fabrication. This work is part of the project MADRIDPV2 (P2018/EMT-4308) funded by the Comunidad Autónoma de Madrid with the support from FEDER Funds, project TEC2017-84378-R, funded by MICINN and European Social Fund, and project Project SCALED (PID2019- 109215RB-C42), funded by the Spanish of Ministry of Science and Innovation.. D. Caudevilla would also acknowledge grant PRE2018-083798, financed by MICINN and European Social Fund.In this work we have explored the growth by high pressure sputtering (HPS) of materials intended for novel selective contacts for photovoltaic cells. This technique shows promise for the low-damage low-temperature deposition of PV materials. We studied the deposition of ITO, MoOx and TiOx using pure Ar and mixed Ar/O2 atmospheres as well as ceramic or metallic targets. We show that HPS deposition of these materials is feasible. The growth rate is greatly reduced when oxygen is added to the argon sputtering atmosphere. The best sputtering RF power was 20-45 W for the pressure range studied. Finally, as-deposited films present high surface recombination, but a mild hot plate anneal at 200ºC recovers long effective lifetimes.engAtribución-NoComercial-CompartirIgual 3.0 Españahttps://creativecommons.org/licenses/by-nc-sa/3.0/es/journal articlehttps://doi.org/10.1109/CDE52135.2021.9455754open access537SputteringPhotovoltaic cellsSelective contactsElectrónica (Física)Física de materialesFísica del estado sólido2211 Física del Estado Sólido