Landauro, C.V.Maciá Barber, Enrique AlfonsoSolbrig, H.2023-06-202023-06-202003-05-011098-012110.1103/physrevb.67.184206https://hdl.handle.net/20.500.14352/52115©2003 The American Physical Society. We are grateful to A. Löoser, and T. Schmidt for useful discussions. This work was supported by the Deutsche Forschungsgemeinschaft.We investigate by analytical means the electronic transport properties of approximants and quasicrystals. The spectral resistivity is modeled by Lorentz functions in agreement with realistic ab initio calculations (linear muffin-tin orbital basis, Kubo-Greenwood formula) for low-order approximants. The analytical expressions for the transport coefficients compare well with both numerical calculations and experiments. Thus, the temperature-dependent conductivity, thermopower, electronic thermal conductivity, and Lorenz number of certain approximants and quasicrystals can be consistently explained.engjournal articlehttp://dx.doi.org/10.1103/physrevb.67.184206https://journals.aps.orgopen access538.9Al-Cu-FeMetal-insulator-transitionDensity-of-statesQuasi-crystalsElectronic-structureBand-structureElectrical-conductivityAnderson transitionThin-filmsPd-ReFísica de materialesFísica del estado sólido2211 Física del Estado Sólido