Caudevilla Gutiérrez, DanielBerencen, Y.Algaidy, SariZenteno Pérez, FranciscoOlea Ariza, JavierSan Andrés Serrano, EnriqueGarcía Hernansanz, RodrigoPrado Millán, Álvaro DelPastor Pastor, DavidGarcía Hemme, Eric2023-06-172023-06-1720212643-130010.1109/CDE52135.2021.9455720https://hdl.handle.net/20.500.14352/8507©IEEE. Spanish Conference on Electron Devices (CDE) (13.2021. Sevilla) This work is part of the project TEC2017-84378-R, funded by MICINN and European Social Fund and project MADRID-PV2 (P2018/EMT-4308) funded by the Comunidad Autónoma de Madrid with the support from FEDER Funds. Parts of this research were carried out at IBC at the Helmholtz–Zentrum Dresden–Rossendorf e. V., a member of the Helmholtz Association. Authors would like to thank Ulrich Kentsch for his assistance with the lowtemperature implantations. D. Caudevilla would also acknowledge grant PRE2018-083798, financed by MICINN and European Social Fund. D. Pastor acknowledges financial support from the program Ramón y Cajal (Grant No. RYC2014-16936).Germanium hyperdoped with deep level donors, such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a combination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing.engAtribución-NoComercial-SinDerivadas 3.0 Españahttps://creativecommons.org/licenses/by-nc-nd/3.0/es/journal articlehttps://doi.org/10.1109/CDE52135.2021.9455720https://ieeexplore.ieee.org/abstract/document/9455720?casa_token=jWEXAmngsWAAAAAA:D5oasqyYOWiTpd5FbDJ3EyF7w_5iXoYz7vWZPWDb_VecRARvsf8mkVGKecCXyZ-V_QBb9xxhjAsopen access537Ion implantationPLMGermaniumTelluriumCapping layerElectrónica (Física)Física del estado sólido2211 Física del Estado Sólido