Hidalgo Alcalde, PedroOttaviani, L.Idrissi, H.Lancin, M.Martinuzzi, S.Pichaud, B.2023-06-202023-06-202004-071286-004210.1051/epjap:2004100https://hdl.handle.net/20.500.14352/51058© E D P Sciences International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10). (10. 2003. Batz sur Mer, Francia).Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The (11 (2) over bar0)-oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial (11 (2) over bar0) 4H n(+)-type substrates.journal articlehttp://dx.doi.org/10.1051/epjap:2004100http://www.epjap.orgmetadata only access538.9GrowthLayersFaceFísica de materiales