García Hemme, EricYu, K. M.Wahnon, P.González Díaz, GermánWalukiewicz, W.2023-06-182023-06-182015-05-040003-695110.1063/1.4919791https://hdl.handle.net/20.500.14352/24080© 2015 AIP Publishing LLC. This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division and National Center for Electron Microscopy/LBNL, under Contract No. DE-AC02-05CH11231. This work was partially supported by the Project MADRID-PV (P 2013/MAE-2780) funded by the Comunidad de Madrid and the project TEC 2013-41730-R and ENE2013-46624-C4-2 from the Spanish MINECO. E. García-Hemme acknowledges the support by a PICATA Predoctoral Fellowship of the Moncloa Campus of International Excellence (UCM-UPM).We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn_(1-x)V_(x)O with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E+) and the downward shift of the fully occupied E- band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E+) and PL peak (E-) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.engjournal articlehttp://dx.doi.org/10.1063/1.4919791http://scitation.aip.org/open access537ZnO thin-filmsSemiconductorBandAlloysStates.ElectricidadElectrónica (Física)2202.03 Electricidad