Khanal, G. M.Acciarito, S.Cardarilli, G.C.Chakraborty, A.Nunzio, L.D.Fazzolari, R.Cristini, A.Re, M.Susi, Gianluca2025-01-302025-01-302017-03Khanal, G.M., Acciarito, S., Cardarilli, G.C., Chakraborty, A., Nunzio, L.D., Fazzolari, R., Cristini, A., Re, M. and Susi, G. (2017), Synaptic behaviour in ZnO–rGO composites thin film memristor. Electron. Lett., 53: 296-298. https://doi.org/10.1049/el.2016.36550013-519410.1049/el.2016.3655https://hdl.handle.net/20.500.14352/117281A zinc oxide (ZnO)-reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike-timing-dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circuit can imitate the biological spike firing scheme and activate the memristor synapse. The fabricated device along with the custom made circuit can be extended for developing future neuromorphic circuit applications.engjournal article1350-911Xhttps://doi.org/10.1049/el.2016.3655https://ietresearch.onlinelibrary.wiley.com/doi/full/10.1049/el.2016.3655open access621.38537.311.33620.3GrapheneZinc compoundsII-VI semiconductorsWide band gap semiconductorsThin film resistorsMemristorsComposite materialsSwitching circuitsHebbian learningPrinted circuitsSynaptic behaviourComposite thin film memristorComposite thin film memristive deviceMemristive-resistive switching deviceHebbian learning ruleSpike-timing-dependent plasticityPCBBiological spike firing schemeNeuromorphic circuit applicationZnO-COFísica (Física)Electrónica (Física)22 Física2211.25 Semiconductores3307 Tecnología Electrónica