Martil De La Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro DelSan Andrés Serrano, Enrique2023-06-202023-06-202003-050957-452210.1023/A:1023907508286https://hdl.handle.net/20.500.14352/51136International Conference on Materials for Microelectronics and Nanoengineering (4. 2002. Espoo, Finlandia). © 2003 Kluwer Academic Publishers. The authors would like to thank C. A. I. de Impalntación Iónica from the Complutense University in Madrid for technical assitance with the ECR-CVD system. This research was partially supported by the Spanish DGESIC under Grants No. TIC 1FD79-2085 and TIC 98/0740.In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor deposition method. C-V results show that samples without SiO2 have more defects than those with SiO2. Deep-level transient spectroscopy and conductance transient measurements demonstrate that as for the samples containing the SiO2 film, these defects are mostly concentrated in the insulator/semiconductor interface, whereas in the other case defects are spatially distributed into the insulator.engjournal articlehttp://dx.doi.org/10.1023/A:1023907508286http://link.springer.comopen access537Insulator-Semiconductor StructuresConductance Transient TechniquesC-VAl/SiNxPlasmaH/InPDepositionQualityDLTS.ElectricidadElectrónica (Física)2202.03 Electricidad