Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques

Miranda Pantoja, José MiguelMuñoz San Martín, SagrarioSebastián Franco, José Luis2023-06-202023-06-2020010-7803-6646-8https://hdl.handle.net/20.500.14352/60814© IEEE. IEEE Instrumentation and Measurement Technology Conference (IMTC/2001) (18.2001.Budapest, Hungria).This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit.engCharacterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniquesbook parthttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=928875http://ieeexplore.ieee.orgopen access537Signal.ElectricidadElectrónica (Física)2202.03 Electricidad