Castro, M.Domínguez-Adame Acosta, Francisco2023-06-202023-06-201997-02-030375-960110.1016/S0375-9601(96)00874-2https://hdl.handle.net/20.500.14352/59368© Elsevier. The authors thank Enrique Maciá and Angel Sánchez for helpful comments. This work has been supported by CICYT (Spain) under project MAT95-0325.We present a thorough study of transmission and localization properties of Fibonacci superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. We use the transfer matrix formalism to determine the transmission coefficient and the degree of localization of the electronic states. We find that the fragmentation pattern of the electronic spectrum is strongly modified when the electric field is switched on, this effect being more noticeable as the system length increases. We relate those phenomena to field-induced localization of carriers in Fibonacci superlattices.engElectric field effects in Fibonacci superlatticesjournal articlehttp://dx.doi.org/10.1016/S0375-9601(96)00874-2http://www.sciencedirect.comhttp://arxiv.org/abs/cond-mat/9611190open access538.9Semiconductor SuperlatticeBloch OscillationsGaasFísica de materiales