Díaz-Guerra Viejo, CarlosPiqueras de Noriega, Javier2023-06-202023-06-202004-01-21[1] Matsunami H and Kimoto T 1997 Mater. Sci. Eng.R 20 125 [2] Zimmermann U, Osterman J, Kuylenstierna D, Konstantinov A, Vetter W M and Dudley M 2003 ¨ J. Appl. Phys. 93 611 [3] Wahab Q, Ellison A, Henry A, Janzen E, Hallin C, Di Persio J and Martínez R 2000 Appl. Phys. Lett. 76 2725 [4] Bhatnagar M, Baliga B J, Kirk H R and Rozgonyi G A 1996 IEEE Trans. Electron Devices 43 150 [5] Kimoto T, Miyamoto N and Matsunami H 1999 IEEE Trans. Electron Devices 46 471 [6] Nava F, Vanni P, Lanzieri C and Canali C 1999 Nucl. Instrum. Methods A 437 354 [7] Kuiken H K and van Opdorp C 1985 J. Appl. Phys. 57 2077 [8] Si W and Dudley M 1997 J. Electron. Mater. 26 151 [9] Konstantinov A O, Hallin C, Pecz B, Kordina O and Janzén E 1997 J. Cryst. Growth 178 495 [10] Neudeck P G, Huang W and Dudley M 1999 IEEE Trans. Electron Devices 46 478 [11] Neudeck P G and Fazi C 1999 IEEE Trans. Electron Devices 46 485 [12] Chernyak L, Lyakhovitskaya V, Richter S, Jakubowicz A, Manassen Y, Cohen S R and Cahen D 1996 J. Appl. Phys. 80 2749 [13] Kittler M, Seifert W, Stemmer M and Palm J 1995 J. Appl. Phys. 77 3725 [14] Chernyak L, Osinsky A, Temkin H, Yang J W, Chen Q and Asif Khan M 1996 Appl. Phys. Lett. 69 2531 [15] Österman J, Hallén A, Jargelius M, Zimmermann U, Galeckas A and Breitzholtz B 2000 Mater. Sci. Forum 338–342 777 [16] Tabib-Azar M, Hubbard S M, Schnabel C M and Bailey S 1998 J. Appl. Phys. 84 3986 [17] Kuznetsov N et al 2000 Mater. Sci. Forum 338–342 229 [18] Kittler M and Seifert W 1993 Phys. Status Solidi a 138 687 [19] Kittler M, Seifert W and Schroder K W 1986 ¨ Phys. Status Solidi a 93 K101 [20] Eckstein M and Habermeier H-U 1991 J. Physique Coll. 1 230953-898410.1088/0953-8984/16/2/026https://hdl.handle.net/20.500.14352/51149© 2004 IOP Publishing Ltd. International Workshop on Beam Injection Assessment of Microstructures in Semconductors (7. 2003. Lille, Francia). This work was supported by MCYT (project MAT2000-2119). Professor F Nava is gratefully acknowledged for providing the material investigated.Electrically active defects in epitaxial, n-type, 4H-SiC have been investigated by electron-beam-induced current (EBIC) in the scanning electron microscope. Several defects, mainly nanopipes, 6H polytype inclusions and triangular, carrot-like, defects were detected by different techniques, including atomic force microscopy and cathodoluminescence. However, EBIC images reveal that only nanopipes are electrically active. The hole diffusion length (L) was calculated at different temperatures from EBIC line scans recorded in defect-free regions. L values of 3.1+/-0.2 and 4.8+/-0.3 mum were respectively estimated at 295 and 420 K. A strong decrease of the diffusion length was observed in the proximity of the nanopipes.engjournal articlehttp://dx.doi.org/10.1088/0953-8984/16/2/026http://iopscience.iop.orgrestricted access538.9Assisted Reverse BreakdownCarrier Diffusion LengthP(+)N Junction DiodesEpitaxial-GrowthCarbide DiodesSiliconBulkFísica de materiales