Wang, MaoBerencén, YonderGarcía Hemme, EricPrucnal, S.Hübner, R.Yuan, YeXu, ChiRebohle, L.Böttger, R.Heller, R.Schneider, H.Skorupa, W.Helm, M.Zhou, Shengqiang2024-02-092024-02-092018-08-31Wang, M., Berencén, Y., García-Hemme, E., Prucnal, S., Hübner, R., Yuan, Y., ... & Zhou, S. (2018). Extended infrared photoresponse in Te-hyperdoped Si at room temperature. Physical Review Applied, 10(2), 024054.2331-701910.1103/physrevapplied.10.024054https://hdl.handle.net/20.500.14352/101016Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature.engjournal articlehttps://doi.org/10.1103/physrevapplied.10.024054open access537Doped siliconAbsortionPhotonicsElectrónica (Física)2203.08 Fotoelectricidad