Parisini, A.Tarricone, L.Bellani, V.Parravicini, G. B.Díaz García, ElenaDomínguez-Adame Acosta, FranciscoHey, R.2023-06-202023-06-202001-01-151098-012110.1103/PhysRevB.63.165321https://hdl.handle.net/20.500.14352/59352© 2001 The American Physical Society. We are grateful to J. C. Flores, K. Fujiwara, G. Guizzetti, M. Hilke, C. Kanyinda-Malu, A. Stella, and D. Tsui for their enlightening discussions. Work in Italy has been supported by the INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’ and in Madrid by DGES under Project MAT2000-0734.We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.engjournal articlehttp://dx.doi.org/10.1103/PhysRevB.63.165321http://journals.aps.orgopen access538.9Disordered Semiconductor SuperlatticesDistributed Layer ThicknessesGaas/Alas SuperlatticesBloch OscillationsPhotoluminescence PropertiesPhotocurrent SpectroscopyCorrelated DisorderOptical-AbsorptionDc ConductanceQuantum WellsFísica de materiales