Méndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDomínguez-Adame Acosta, FranciscoDe Diego, N.2023-06-202023-06-201988-11-010021-897910.1063/1.341269https://hdl.handle.net/20.500.14352/59001© 1988 Amer Inst Physics. The authors thank Wacker-Chemitronic (Dr K. Löhnert) for providing the samples. The help of Dr. J. Llopis during this work is acknowledged. This work was partially supported by Comisión Interministerial de Ciencia y Tecnología (Project No. PB86-0151).Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.engjournal articlehttp://dx.doi.org/10.1063/1.341269http://scitation.aip.orgopen access538.9PhysicsAppliedFísica de materiales