Martil De La Plaza, IgnacioGonzález Díaz, Germán2023-06-202023-06-202003-06-010021-897910.1063/1.1565175https://hdl.handle.net/20.500.14352/51135© 2003 American Institute of Physics. The authors wish to thank Professor J. Jiménez for his useful comments on the manuscript. This work was partially supported by DGICYT Grant No. PB97-1254 and by CICYT Grant No. TIC-98/0740. One of the authors (S. H.) acknowledges support from Departament d’Universitats i Recerca de la Generalitat de Catalunya.We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiNx:H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate.. Protruding regions. of a few microns were observed on the surface, which were identified as misoriented In1-xGaP and InP crystals by means of micro-Raman measurements. (C) 2003 American Institute of Physics.engjournal articlehttp://dx.doi.org/10.1063/1.1565175http://scitation.aip.orgopen access537Raman-ScatteringImplantation DamageIon-ImplantationIn(1-x)GaxAsyP(1-y)InPSiIn(0.53)Ga(0.47)AsBehaviorAlloysModes.ElectricidadElectrónica (Física)2202.03 Electricidad