Hidalgo Alcalde, PedroPlaza, J. L.Méndez Martín, María BianchiDieguez, E.Piqueras De Noriega, Francisco Javier2023-06-202023-06-202002-12-160953-898410.1088/0953-8984/14/48/370https://hdl.handle.net/20.500.14352/58922© 2002 IOP Publishing Ltd. This work was supported by MCYT (Project MAT2000-2119). Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.engjournal articlehttp://iopscience.iop.org/0953-8984/14/48/370http://iopscience.iop.orgopen access538.9Doped GasbErbiumLuminescenceCentersSiliconFísica de materiales