Maestre Varea, DavidRamírez Castellanos, JulioHidalgo Alcalde, PedroCremades Rodríguez, Ana IsabelGonzález Calbet, José MaríaPiqueras De Noriega, Francisco Javier2023-06-202023-06-202007-041434-194810.1002/ejic.200600990https://hdl.handle.net/20.500.14352/50820© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2007. This work was supported by MEC (project MAT 2003-00455) and by UCM-CM (Group 910146).The defect structure of sintered SnO_2 was investigated by high-resolution transmission electron microscopy (HRTEM), cathodoluminescence (CL), and electrical measurements. HRTEM shows the presence of the SnO phase in the sintered samples as well as twinning, stacking faults, and disordered intergrowths. The sintered samples annealed under an oxygen atmosphere show changes in the defect structure and in the CL spectra. In particular, the intensity of a CL band at 1.94 eV, related to oxygen vacancies, decreased as the electrical resistivity increased. The results are discussed by considering the presence of stoichiometric defects such as oxygen vacancies and Sn interstitials in the final structure and their evolution during the annealing process under an oxygen atmosphere.engjournal articlehttp://onlinelibrary.wiley.com/doi/10.1002/ejic.200600990/fullhttp://onlinelibrary.wiley.comrestricted access538.9Transparent Conducting OxideThin-FilmsTin DioxideOxygenInterfacesSurfaceStatesFísica de materiales