Martil De La Plaza, IgnacioGonzález Díaz, GermánHernández Rojas, J. L.Lucía Mulas, María LuisaSánchez Quesada, FranciscoSantamaría Sánchez-Barriga, Jacobo2023-06-202023-06-201992-04-130003-695110.1063/1.107140https://hdl.handle.net/20.500.14352/59311© American Institute of Physics. The authors would like to express their acknowledgments to S. García-Martín (XRD facilities) and J. Carabe (Optical Measurement facilities).CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.engjournal articlehttp://dx.doi.org/10.1063/1.107140http://scitation.aip.org/open access537PhysicsApplied.ElectricidadElectrónica (Física)2202.03 Electricidad