Hidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDutta, P: S.Dieguez, E.2023-06-202023-06-201999-10-150163-182910.1103/PhysRevB.60.10613https://hdl.handle.net/20.500.14352/58939©1999 The American Physical Society. This work was supported by DGES (PB96-0639) and by CICYT (ESP98-1340) (MAT98-1306E).V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5].engjournal articlehttp://prb.aps.org/abstract/PRB/v60/i15/p10613_1http://prb.aps.orgopen access538.9Gallium AntimonideFísica de materiales