Díaz-Guerra Viejo, CarlosPiqueras De Noriega, Francisco JavierGolubev, VG.Kurdyukov, D.A.Pevtsov, A. B.Zamoryanskaya, M. V.2023-06-202023-06-202002-11-130003-695110.1063/1.1325387https://hdl.handle.net/20.500.14352/59132© 2000 American Institute of Physics. This work was supported by DGES (Project No. PB96-0639), the Russian R&D program ‘‘Nanostructures’’ (Grant No. 97-2016) and RFBR under Grant No. 98-02-17350.Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt-Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5-0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures.engjournal articlehttp://dx.doi.org/10.1063/1.1325387http://scitation.aip.orgopen access538.9Electronic-StructureSi(111)2x1 SurfaceMicroscopyFísica de materiales