Díaz-Guerra Viejo, CarlosPiqueras De Noriega, Francisco Javier2023-06-202023-06-202007-10-150021-897910.1063/1.2799952https://hdl.handle.net/20.500.14352/51094© 2007 American Institute of Physics. This work has been supported by MEC through project MAT2006-01259.V_2O_5 nanostructures have been grown on 4H-SiC and Si substrates by a thermal deposition method without a catalyst. High aspect ratio nanowires with rectangular cross sections were grown on 4H-SiC. High-resolution transmission electron microscopy observations and cathodoluminescence (CL) spectroscopy measurements reveal the high crystal quality of the grown nanowires. Deposition on Si substrates leads to the growth of V_2O_5 platelets or rod-shaped crystals ending in arrays of parallel sharp nanotips with apex radius in the 50 nm range. A CL emission band observed centered at about 1.70 eV in spectra from these nanostructures is tentatively attributed to defect centers involving oxygen vacancies.engjournal articlehttp://dx.doi.org/10.1063/1.2799952http://scitation.aip.orgopen access538.9Vanadium-PentoxideOptical-PropertiesThin-FilmsOxidesFísica de materiales