Herrera, M.Cremades Rodríguez, Ana IsabelPiqueras De Noriega, Francisco JavierStutzmann, M.Ambacher, O.2023-06-202023-06-202004-110021-897910.1063/1.1690454https://hdl.handle.net/20.500.14352/50848© 2004 American Institute of Physics. This work has been partially support by the MCYT (Project No. MAT-2000-2119). M. H. thanks CONACYT for a postdoctoral grant. The help of Dr. Hidalgo in the experimental measurements is acknowledged.Cathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinholes are observed in a tensile strained sample. CL images show an enhanced emission around the pits and a lower intensity at the V-shaped pinholes. Rounded pinholes appear in compressively strained samples in island-like regions with higher In concentration. The grain structure near the pinholes is resolved by AFM. (C) 2004 American Institute of Physics.engjournal articlehttp://jap.aip.org/japiau/v95/i10/p5305_s1http://jap.aip.orgopen access538.9Multiple-Quantum WellsFormation MechanismStructural DefectsBand-GapHeterostructuresLuminescenceGrowthAlloysDislocationsStrainFísica de materiales