Franco Peláez, Francisco JavierClemente Barreira, Juan AntonioBaylac, MaudRey, SolenneVilla, FrancescaMecha López, HortensiaAgapito Serrano, Juan AndrésPuchner, HelmutHubert, GuillaumeVelazco, Raoul2023-06-172023-06-172017-08-010018-949910.1109/TNS.2017.2726938https://hdl.handle.net/20.500.14352/17931This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments).engjournal articleopen accessMultiple cell upsetssingle bit upsetssingle eventssoft errorsSRAMsElectrónica (Física)Física nuclearOrdenadoresCircuitos integrados2207 Física Atómica y Nuclear1203 Ciencia de Los Ordenadores2203.07 Circuitos Integrados