Urbieta, C.Fernández Sánchez, PalomaPiqueras De Noriega, Francisco JavierMuñoz, V.2023-06-202023-06-202001-03-220921-510710.1016/S0921-5107(00)00639-5https://hdl.handle.net/20.500.14352/59126© 2001 Elsevier Science B.V. Bi-Annual Meeting of the International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2000) (5. 2000. Heralkion, Grecia). This work was supported by CICYT (grants MAT98-0975-c02-01, 1FD97-0086 and MAT98-1306E) and DGES (grant PB96-0639).ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallization (SPR) method. During. SPP,. twinned regions appear with different electronic recombination properties. The recrystallizations were performed under different atmospheres, Ar or Se? and pressures to investigate the influence of growth conditions oil these structural features. Recombination properties were studied by means of cathodoluminescense (CL) and remote-electron beam induced current (REBIC). Wavelength dispersive X-ray (WDX) mappings were also performed to analyze possible differences in stoichiometry related to the presence of extended defects.engjournal articlehttp://dx.doi.org/10.1016/S0921-5107(00)00639-5http://www.sciencedirect.comrestricted access538.9Física de materiales