Martil De La Plaza, IgnacioGarcía Hemme, EricGarcía Hernansanz, RodrigoGonzález Díaz, GermánOlea Ariza, JavierPrado Millán, Álvaro Del2023-06-202023-06-202012-11-050003-695110.1063/1.4766171https://hdl.handle.net/20.500.14352/44230© 2012 American Institute of Physics. Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations and the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken.We have analyzed the increase of the sheet conductance (Delta G(square)) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high Delta G(square), even higher than that measured in a silicon reference sample. This increase in the Delta G(square) magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.engjournal articlehttp://dx.doi.org/10.1063/1.4766171http://scitation.aip.orgopen access537Solar-CellsSemiconductors.ElectricidadElectrónica (Física)2202.03 Electricidad