Martil De La Plaza, IgnacioGonzález Díaz, Germán2023-06-202023-06-202002-11-200217-979210.1142/S0217979202015492https://hdl.handle.net/20.500.14352/59097IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002) (8. 2002. Xian-Peoples, China). © World Scientific Publishing Company. This work was partially by DGICYT grant PB97-1254 and by CICYT grant TIC-98/0740. One of us (S.H.) acknowledges support from Departament d'Universitats i Recerca de la Generalitat de Catalunya.We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy.engjournal articlehttp://dx.doi.org/10.1142/S0217979202015492http://www.worldscientific.comopen access537ScatteringIn(1-x)GaxAsyP(1-y)InP.ElectricidadElectrónica (Física)2202.03 Electricidad