García, HéctorCastán, HelenaDueñas, SalvadorBailón, LuisGarcía Hernansanz, RodrigoOlea Ariza, JavierPrado Millán, Álvaro DelMartil De La Plaza, Ignacio2023-06-182023-06-182016-07-161556-276X10.1186/s11671-016-1545-zhttps://hdl.handle.net/20.500.14352/24594© 2016 The Author(s). The study has been supported by the Spanish TEC2014 under Grant Nos. 52152-C3-3-R and TEC2013-41730-R, funded by the Ministerio de Economía y Competitividad, and the P2013/MAE-2780 funded by the Comunidad de Madrid.A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.engAtribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/journal articlehttp://dx.doi.org/10.1186/s11671-016-1545-zhttp://nanoscalereslett.springeropen.com/open access537InterfaceDeffectsVoltageLayer.ElectricidadElectrónica (Física)2202.03 Electricidad