Martil De La Plaza, IgnacioGarcía Hemme, EricGonzález Díaz, GermánOlea Ariza, JavierPrado Millán, Álvaro Del2023-06-202023-06-202011-11-090268-124210.1088/0268-1242/26/11/115003https://hdl.handle.net/20.500.14352/44233© 2011 IOP Publishing Ltd. The authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations. This work was made possible thanks to the contract MAT2010-16116 of the Spanish Ministry of Education and Science. This work was partially supported by the Project NUMANCIA II (grant no S-2009/ENE/1477) funded by the Comunidad de Madrid and by the Project GENESIS-FV (INGENIO 2010) (grant no CSD2006-0004) funded by the Spanish Consolider National Program.We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (10(15)-5 x 10(16) cm(-2)) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain ultraheavily impurified Si layers with Ti concentrations six orders of magnitude above the solid solubility limit in a layer several tens of nanometers thick. The PLM annealing processes are needed to recover the crystal quality and to keep the high Ti concentration required to form an intermediate band (IB). The UV Raman analysis permits us to evaluate the lattice crystallinity of the different implanted doses probing only the implanted region and points out Ti interstitial location in the host lattice in agreement with theoretical predictions for IB formation. By contrast, visible Raman spectra are only sensitive to the presence of a fully amorphized implanted layer as in the rest of the crystalline layers the probing depth far exceeds the implanted layer thickness and the signal is dominated by the undamaged Si.engjournal articlehttp://dx.doi.org/10.1088/0268-1242/26/11/115003http://iopscience.iop.orgrestricted access537Amorphous-SiliconDoped SiliconTemperature.ElectricidadElectrónica (Física)2202.03 Electricidad