Castaldini, A.Cavallini, A.Fraboni, BPiqueras de Noriega, JavierMéndez Martín, Bianchi2023-06-202023-06-2019940-7503-0294-1https://hdl.handle.net/20.500.14352/60828© IOP Publishing LTD. International Conference on Defect Recognition and Image Processing in Semiconductors and Devices (5. 1993. Santander)Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of the minority carrier diffusion length L across each wafer has been correlated with the profiles obtained for dislocation density and N-D-N-A. By comparing the present results with previous cathodoluminescence analyses (Mendez et al. 1988, Mendez et al. 1991), it is suggested that dislocations and dislocation related centres determine the L values.book partmetadata only access538.9CathodoluminescenceFísica de materiales