Nogales Díaz, EmilioMéndez Martín, BianchiPiqueras de Noriega, JavierPlugaru, RCoraci, A.Garcia, J. A.2023-06-202023-06-202002[1] Coffa S, Polman A and Swartz R N (ed) 1996 Rare earth doped emiconductors II MRS Sym. Proc. No 422 [2] Ennen H, Schneider J , Pomrenke G and Axmann A 1981 Appl. Phys. Lett. 43 943 [3] Custer J S, Polman A and Van Pinxteren H M 1994 J. Appl. Phys. 75 2809 [4] Polman A, van den Hoven G N, Custer J S, Serna R and Alkemade P F A 1995 J. Appl. Phys. 77 1256 [5] Priolo F, Franzò G, Coffa S and A Carnera 1998 Phys. Rev. B 57 4443 [6] van den Hove G N, Shin J H, Polman A, Lombardo S and Campisano S U 1995 J. Appl. Phys. 78 2642 [7] Zanatta A R, Nunes L A O and Tessler L R 1997 Appl. Phys. Lett. 70 511 [8] Fuhs W, Ulber I, Weiser G, Bresler M S, Gusev O B, Kuznetsov A N, Kudoyarova V Kh, Terukov E I and Yassievich I N 1997 Phys. Rev. B 56 9545 [9] Dorofeev A M, Gaponenko N V, Bondarenko V P, Bachilo E E, Kazuchits N M, Leshok A A, Troyanova G N, Vorosov N N, Borisenko V E, Gnaser H, Bock W, Becker P and Oechsner H 1995 J. Appl. Phys. 77 2679 [10] Michel J, Benton J L, Ferrante R F, Jacobson D C, Eaglesham D J, Fitzgerald E A, Xie Y H, Poate J M and Kimerling L C 1991 J. Appl. Phys. 70 2672 [11] Polman A 1997 Appl. Phys. Rev: J. Appl. Phys. 82 1 [12] Suezawa M and Sumino K 1994 Japan. J. Appl. Phys. 33 L1782 [13] Kasuya A and Suezawa M 1997 Appl. Phys. Lett. 71 2728 [14] Steckl A J, Garter M, Birkhahn R and Scofield J 1998 Appl. Phys. Lett. 73 2450 [15] Lozykowski H J, Jadwisienczak W M and Brown I 1999 Appl. Phys. Lett. 74 1129 [16] Heikenfeld J, Lee D S, Garter M, Birkhahn R and Steckl A J 2000 Appl. Phys. Lett. 76 1365 [17] Polman A, Jacobson D C, Eaglesham D J, Kistler R C and Poate J M 1991 J. Appl. Phys. 70 3778 [18] Jaba N, Kanoun A, Mejri H, Selmi A, Alaya S and Maaref H 2000 J. Phys.: Condens. Matter 12 4523 [19] Méndez B and Piqueras J 1991 J. Appl. Phys. 69 2776 [20] Masterov V F, Nasredinov F S, Seregin P P, Kudoyarova V Kh, Kuznetsov A N and Terukov E I 1998 Appl. Phys. Lett. 72 7280022-372710.1088/0022-3727/35/4/303https://hdl.handle.net/20.500.14352/58933© 2002 IOP Publishing Ltd. This work was supported by DGI (project MAT2000-2119) and by the Scientific Cooperation Program between Spain and Romania.Visible luminescence from erbium oxide layers grown on crystalline and amorphous silicon (c-Si and a-Si) has been investigated. The results show strong red and green cathodoluminescence bands due to intraionic Er3+ radiative transitions at room temperature. The use of c-Si or a-Si as substrate led to a red or green dominant emission, respectively, which has been explained in terms of the oxygen content in the substrate. The results obtained from samples grown in different atmospheres also support this assumption.engjournal articlehttp://iopscience.iop.org/0022-3727/35/4/303http://iopscience.iop.orgopen access538.9ExcitationErCathodoluminescencePhotoluminescenceOxygenSiFísica de materiales