Nogales Díaz, EmilioMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierPlugaru, RCoraci, A.Garcia, J. A.2023-06-202023-06-2020020022-372710.1088/0022-3727/35/4/303https://hdl.handle.net/20.500.14352/58933© 2002 IOP Publishing Ltd. This work was supported by DGI (project MAT2000-2119) and by the Scientific Cooperation Program between Spain and Romania.Visible luminescence from erbium oxide layers grown on crystalline and amorphous silicon (c-Si and a-Si) has been investigated. The results show strong red and green cathodoluminescence bands due to intraionic Er3+ radiative transitions at room temperature. The use of c-Si or a-Si as substrate led to a red or green dominant emission, respectively, which has been explained in terms of the oxygen content in the substrate. The results obtained from samples grown in different atmospheres also support this assumption.engjournal articlehttp://iopscience.iop.org/0022-3727/35/4/303http://iopscience.iop.orgopen access538.9ExcitationErCathodoluminescencePhotoluminescenceOxygenSiFísica de materiales