Panin, G. N.Piqueras De Noriega, Francisco JavierSochinskii, N.Dieguez, E.2023-06-202023-06-201997-02-170003-695110.1063/1.118237https://hdl.handle.net/20.500.14352/59161© 1997 American Institute of Physics. G. P. and N. S. thank Spanish MEC for research grants. This work was supported by the DGICYT (Project No. PB 93-1256) and CICYT (Project No. ESP95-0148).The aα-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the α-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during α-Hgl_2 epitaxial growth.engjournal articlehttp://dx.doi.org/10.1063/1.118237http://scitation.aip.org/open access538.9CathodoluminescenceCrystalsWafersFísica de materiales