Martil De La Plaza, IgnacioGonzález Díaz, Germán2023-06-202023-06-201999-040040-609010.1016/S0040-6090(98)01669-1https://hdl.handle.net/20.500.14352/59280International Vacuum Congress (14. 1999. Birmingham, Inglaterra )/ International Conference on Solid Surfaces (10. 1999. Birmingham, Inglaterra) / International Conference on Nanometre-Scale Science and Technology (5. 1999. Birmingham, Inglaterra) / International Conference on Quantitative Surface Analysis. (10. 1999. Birmingham,Inglaterra). © EIsevier Science SA.We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optical properties of a-SiN(x):H. Three compositions were investigated: x = 0.97, x = 1.43 and x = 1.55. Two different behaviors are observed depending on whether the as-grown nitrogen to silicon ratio of the samples is above or below the percolation threshold (x = 1.1) of Si-Si bonds, in the matrix of silicon nitride. The samples with x: = 1.43 and 1.55 experience an increase of the Tauc coefficient (B) and a decrease of the Urbach parameter (E(0)) at low annealing temperatures. while at high temperatures the trend is inverted. On the contrary, the samples with x = 0.97 show a slight and continuous increase of B and a similar decrease of E(0). The different behavior of the films with x < 1.1 is explained by the percolation of the Si-Si bonds, which maintains the order of the structure at high annealing temperatures, preventing the inversion of the trends of B and E(0).engjournal articlehttp://dx.doi.org/10.1016/S0040-6090(98)01669-1http://www.sciencedirect.com/open access537Chemical-Vapor-DepositionDielectrics.ElectricidadElectrónica (Física)2202.03 Electricidad