Quesada, A.García, M. A.Andrés, M.Hernando Grande, AntonioFernández, J. F.Caballero, A. C.Martín González, M. S.Briones, F.2023-06-202023-06-202006-120021-897910.1063/1.2399884https://hdl.handle.net/20.500.14352/52090©2006 American Institute of Physics. This work has been supported by the University Complutense through the project PR1/05/13325 and CICYT project MAT2004–04843–C02–01.The origin of ferromagnetism in diluted magnetic semiconductors is still an open question, yielding a great deal of research across the world. This work focuses on the Co-Zn-O system. Room-temperature ferromagnetism is observed after a partial reaction of Co_3O_4 and ZnO, which can be ascribed neither to carrier mediation nor segregated cobalt metallic clusters. Another mechanism is yielding room-temperature ferromagnetism. This mechanism is associated with a partial reaction of ZnO and Co_3O_4 grains, and always appears when the starting phases (Co_3O_4 and ZnO) are present in the sample, suggesting that interfaces are involved in the origin of the observed ferromagnetism.engjournal articlehttp://dx.doi.org/10.1063/1.2399884http://aip.scitation.orgopen access538.9Room-temperature FfrromagnetismDoped ZnOMagnetic semiconductorsThin-filmsOriginZn1-XcoxoSystemFísica de materialesFísica del estado sólido2211 Física del Estado Sólido