Carpio Rodríguez, Ana MaríaBonilla, Luis L.Wacker, A.Schöll, E.2023-06-202023-06-202000Carpio Rodríguez, A. M., Bonilla, L. L., Wacker, A. y Schöll, E. «Wave Fronts May Move Upstream in Semiconductor Superlattices». Physical Review E, vol. 61, n.o 5, mayo de 2000, pp. 4866-76. DOI.org (Crossref), https://doi.org/10.1103/PhysRevE.61.4866.1539-375510.1103/PhysRevE.61.4866https://hdl.handle.net/20.500.14352/57219In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.engjournal articlehttps://doi.org/10.1103/PhysRevE.61.486http://journals.aps.org/pre/pdf/10.1103/PhysRevE.61.4866open access530.1Electric-field domainsGaas-Alas superlatticesNegative differential conductivityCharge-density wavesTransport phenomenonSelf oscillationsBifurcationStabilityDynamicsFísica matemática