Martil De La Plaza, IgnacioGonzález Díaz, Germán2023-06-202023-06-202007978-1-55899-914-510.1557/PROC-0957-K07-24https://hdl.handle.net/20.500.14352/53368Symposium on Zinc Oxide and Related Materials (2006. Boston, USA).In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+.book parthttp://dx.doi.org/10.1557/PROC-0957-K07-24http://journals.cambridge.orgmetadata only access537Modes.ElectricidadElectrónica (Física)2202.03 Electricidad